 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW (typ.) Infrared light emission close to monochromatic light : P = 950 nm (typ.) Small ceramic package 3.750.3 2.00.2 12.5 min. o3.00.15 o0.30.05 o0.450.05 0.90.15 Absolute Maximum Ratings (Ta = 25C) 2 1 1: Anode 2: Cathode Parameter Power dissipation Forward current (DC) Pulse forward Current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 75 50 1 3 -25 to +85 -30 to +100 Unit mW mA A V C C f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO P VF IR Ct Conditions IF = 50mA IF = 50mA IF = 50mA IF = 50mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 1.5 typ 3.5 950 50 1.2 50 80 max Unit mW nm nm 1.5 10 V A pF deg. 1 Infrared Light Emitting Diodes LN162S IF -- Ta 60 10 2 IFP -- Duty cycle 80 Ta = 25C 70 IF -- VF Ta = 25C IF (mA) IFP (A) 50 IF (mA) Forward current 10 -1 1 10 10 2 10 60 50 40 30 20 10 Allowable forward current 40 Pulse forward current 1 30 10 -1 20 10 10 -2 0 - 25 0 20 40 60 80 100 10 -3 10 -2 0 0 0.4 0.8 1.2 1.6 Ambient temperature Ta (C ) Duty cycle (%) Forward voltage VF (V) IFP -- VF 10 4 tw = 10s Duty Cycle = 0.1% Ta = 25C 10 3 PO -- Ta 1.6 IF = 50mA VF -- Ta IFP (mA) Relative radiant power PO 10 3 10 2 Pulse forward current 10 2 VF (V) 1.2 IF = 50mA 10mA Forward voltage 0 40 80 120 0.8 10 10 0.4 1 10 -1 0 1 2 3 4 5 1 - 40 0 - 40 0 40 80 120 Forward voltage VF (V) Ambient temperature Ta (C ) Ambient temperature Ta (C ) P -- Ta 1000 IF = 50mA 100 Spectral characteristics IF = 50mA Ta = 25C Directivity characteristics 0 100 80 60 40 10 20 30 40 Peak emission wavelength P (nm) Relative radiant intensity (%) Relative radiant intensity (%) 980 80 50 60 70 80 90 960 60 20 940 40 920 20 900 - 40 0 40 80 120 0 860 900 940 980 1020 1060 1100 Ambient temperature Ta (C ) Wavelength (nm) 2 |
Price & Availability of LN162S
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |